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| CMPD5001 CMPD5001S HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching inductive load applications requiring extremely high current capability. SOT-23 CASE The following configurations are available: CMPD5001 CMPD5001S SINGLE DUAL, IN SERIES MARKING CODE: DA2 MARKING CODE: D49 MAXIMUM RATINGS (TA=25oC) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Forward Surge Current, tp=1 s Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ,Tstg JA 120 400 800 600 6000 1500 350 -65 to +150 357 UNITS V mA mA mA mA mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL BVR IR IR VF VF VF VF TEST CONDITIONS IR=1.0mA VR=90V VR=90V, TA=150oC IF=10mA IF=50mA IF=100mA IF=200mA MIN 120 MAX 175 100 100 0.75 0.84 0.90 1.00 UNITS V nA A V V V V 140 SYMBOL VF CT trr trr TEST CONDITIONS IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 1.0mA, RL=100 IF=IR=10mA, RECOV. TO 1.0mA, RL=100 MIN MAX 1.25 35 60 50 UNITS V pF ns ns All dimensions in inches (mm). NO CONNECTION A C1 A2 C CMPD5001 A1, C2 CMPD5001S R2 141 |
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